W. E. Falcon and Mohammad R. Madani “A Teletraffic Simulation Algorithm for Low Earth Orbit Mobile Satellite Systems”, The 2005 International Conference on Wireless Networks,  (ICWN'05: June 27-30, 2005, Las Vegas, USA, Paper ID #:  ICW3097. Presented

M.R. Madani, Patent “Debit Card Read/Write Controller and Process”, US 6,581,831 B2, June 24, 2003.

M.R. Madani, S. Palakodety, “Minimizing Number of FBGS in Optical Switches Using Redirectional Circulators,” Proceedings of the IASTED International Conference, Vol. pp. 339-344, Banff, Canada, July 2002.

“Current Density Distribution Measurement of Negative Point to Plane Corona Discharge", M.R. Madani and T. Miller, IEEE Transaction on Instrumentation and Measurement.  Vol.47, No.4, pp.907-913, August 1998.

Three-Dimentional Defect Sensitivity Modeling for Open Circuits in ULSI Strucures,”M.K. Kidambi, A. Tyagi, M.R. Madani, and M.A. Bayoumi, IEEE Transaction on Computer-Aided Design of Integrated Circuits and Systems, Vol. 17, No.4, April 1998.

Electrochemical Impedance Spectroscopy of Nickel Implanted into Steel at 3 MeV,” D.P. Vollmer, J.D. Garber, M.R. Madani, G.A. Glass, and F.H. Walter, Analytical Letters, 30 (2), pp. 395-366, 1997.

N. Maldonado, G. Andrus, A. Tyagi, M. Madani, and M. Bayoumi, "A Post-Processing Algorithm for Short-Circuit and Open-Circuit Defect Sensitivity Reduction in VLSI Layouts, presented in the IEEE International Conference on Wafer Scale Integration, San Francisco, California, (January, 1995).

M.K. Kidambi, A. Tyagi, M.R.Madani, and M.A. Bayoumi"Parametrized Modeling of Open Circuit Critical Volume for Three Dimensional Defects in VLSI Processing,"IEEE Proceedings of 7Th International Conference on VLSI Design, Calcutta, India, pp. 333‑338, 1994. (IEEE Press)

M.R. Madani and P.K. Ajmera "Characterization of Silicon Oxide Films Grown at Room Temperature by Point-to-Plane Corona Discharge," Journal of Electronic Materials, vol. 22, no. 9, pp. 1147-1152 1993.

M.R. Madani and P.K. Ajmera "Application of Nicollian‑Reisman model to negative point‑to‑plane corona oxidation of  silicon," Electron. Lett., vol. 27, no. 15, pp. 1352‑1353, 1991.

J.T. Richard, M.R. Madani and J.E. Grantham "The Effects  of  Gate Oxide Thickness Variations on MOSFET Current Mirrors,"   Presented at the Twenty‑Second Annual Pittsburg Conference on Modeling and Simulation, Pittsburgh, Pennsylvania, May, 1991.

M.R. Madani and P.K. Ajmera "Interface Properties of the Oxide Grown on Si at Low Temperatures Using Point‑To‑Plane Corona Discharge," IEEE Proceedings Southeastcon'90 vol. 3, pp. 992-995, 1990.

M.R. Madani and P.K. Ajmera "Electrical Properties of the Oxide Grown on Si at Room Temperature Using Point‑To‑Plane Corona Discharge," IEEE Proceedings Southeastcon'89, vol. 1, pp. 357-360, 1989.

M.R. Madani and P.K. Ajmera  "Low Temperature Oxidation of Silicon, "Electron. Lett., vol. 24, no. 14, pp. 856‑857, 1988.